Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-07-19
2005-07-19
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S501000, C257S520000, C438S424000, C438S425000, C438S426000, C438S427000, C438S428000, C438S429000
Reexamination Certificate
active
06919612
ABSTRACT:
An improved isolation structure for use in an integrated circuit and a method for making the same is disclosed. In a preferred embodiment, an silicon dioxide, polysilicon, silicon dioxide stack is formed on a crystalline silicon substrate. The active areas are etched to expose the substrate, and sidewall oxides are formed on the resulting stacks to define the isolation structures, which in a preferred embodiment constitute dielectric boxes containing the polysilicon in their centers. Epitaxial silicon is grown on the exposed areas of substrate so that it is substantially as thick as the isolation structure, and these grown areas define the active areas of the substrate upon which electrical structures such as transistors can be formed. While the dielectric box provides isolation, further isolation can be provided by placing a contact to the polysilicon within the box and by providing a bias voltage to the polysilicon.
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Clampitt Darwin A.
Lyonsmith Shawn D.
Tsui Regan S.
Le Dung A.
Micro)n Technology, Inc.
Wong Cabello Lutsch Rutherford & Brucculeri LLP
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