Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-14
2006-11-14
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257S296000, C257S532000, C327S530000
Reexamination Certificate
active
07135730
ABSTRACT:
A first MOS-on-NWELL device is formed on a substrate and has its pickup terminals optionally connected together. A second MOS-on-NWELL device is formed on the substrate and has its pickup terminals optionally connected together. A gate of the first MOS-on-NWELL device is connected to the pickup terminals of the second MOS-on-NWELL device. A gate of the second MOS-on-NWELL device is connected to the pickup terminals of the first MOS-on-NWELL device. A first PMOS transistor is formed on a substrate and has its source and drain terminals connected together. A second PMOS transistor is formed on a substrate and has its source and drain terminals connected together. A gate of the first PMOS transistor is connected to the source and drain terminals of the second PMOS transistor. A gate of the second PMOS transistor is connected to the source and drain terminals of the first PMOS transistor. A combination of the first and second PMOS transistors are connected in parallel with the first and second MOS-on-NWELL devices.
REFERENCES:
patent: 5254880 (1993-10-01), Horiguchi et al.
Chen Chun-ying
Song Jungwoo
Broadcom Corporation
Loke Steven
Sterne Kessler Goldstein & Fox P.L.L.C.
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