Bias-adjusted magnetoresistive devices for magnetic random...

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S171000, C365S173000

Reexamination Certificate

active

07068531

ABSTRACT:
A method and apparatus are presented for shifting a hysteresis loop of a magnetoresistive device. For example, a method provides for applying a bias current to a word line of the magnetoresistive device during either a read sequence or a write sequence. The bias current is preferably configured to substantially center a hysteresis loop of the device without switching a binary state of the device.

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Daughton, “Magnetoresistive Random Access Memory (MRAM),” pp. 1-13 (Feb. 4, 2000).
International Search Report, Mailed May 30, 2005.

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