Bi.sub.4 Ti.sub.3 O.sub.12 Single crystal growth from saturated

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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423598, 23305R, 156607, B01J 1704, B01J 1720, C01G 2900

Patent

active

039620271

ABSTRACT:
Method of growing single crystal of Bi.sub.4 Ti.sub.3 O.sub.12 by a top-seeded growth technique. A solution of TiO.sub.2 is a solvent consisting of Bi.sub.2 O.sub.3 with/without B.sub.2 O.sub.3 is prepared. The temperature of the solution is adjusted to a value which is not more than 5.degree.C above the saturation temperature of the solution, and is maintained at this value while the degree of saturation of the solution is increased by dissolving TiO.sub.2. A Bi.sub.4 Ti.sub.3 O.sub.12 seed crystal is then lowered into the solution which is gradually cooled so as to grow a single crystal. The transparency of crystals grown from a solution containing B.sub.2 O.sub.3 in addition to Bi.sub.2 O.sub.3 is better than that of crystals grown from solutions in which the solvent consists solely of Bi.sub.2 O.sub.3.

REFERENCES:
patent: 3677718 (1972-07-01), Lawless
Kobayoshi, Growing of Ferroelectric PbTiO.sub.3 Crystals, pp. 866 to 867, Journal of App. Phy., vol. 29, No. 5, May 1958.
Brice et al., The Czochralski Growth of Bi.sub.12 SiO.sub.20 Crystals, Jour. of Crystal Growth, 24/25, 1974, pp. 429-431.
Chemical Abstracts, vol. 79, 1973, No. 14, p. 592, 86891g Bi.sub.4 Ti.sub.3 O.sub.12, Gralosso, Dio Synth., 1973, No. 14, 144-145.

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