BI-MOS semiconductor memory having high soft error immunity

Details BI-MOS semiconductor memory having high soft error immunity BI-MOS semiconductor memory having high soft error immunity

1987-04-16

1989-09-12

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Semiconductive

365203, 36518907, 36523001, 365205, 365155, G11C 700

Patent

active

048666734

ABSTRACT:
A semiconductor memory is provided having high reliability, and which particularly prevents data destruction by .alpha. rays, and the like. In a semiconductor memory for detecting memory data from the conduction ratio between a transistor of a flip-flop type memory cell connected to selected word line and data line pairs and a load device of the data line, an arrangement is provided for setting the word line voltage to a voltage lower than the sum of the data line voltage and the threshold voltage of a data transfer MOS transistor of the memory cell. The signal read out from the memory cell is then applied through the data line to a differential amplifier using the base or gate of a junction type transistor as its input. Particularly to set the word line voltage to a voltage lower than the sum of the data line voltage and the threshold voltage of the data transfer MOS transistor of the memory cell, a device having high driving capability such as a bipolar transistor is used as the load of the data line. The word line voltage is changed over to two stages so that the data line voltage V.sub.D and the word line voltage V.sub.W satisfy the relation V.sub.W<V.sub.D +V.sub.TH in a read cycle and the relation V.sub.W >V.sub.D +V.sub.TH in a write cycle (where V.sub.TH is the threshold voltage of NMOS inside the memory cell).

REFERENCES:
patent: 4747083 (1988-05-01), Nakajima et al.
patent: 4750155 (1988-06-01), Hsieh

Affiliated with

Also associated with

Rating

BI-MOS semiconductor memory having high soft error immunity does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with BI-MOS semiconductor memory having high soft error immunity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and BI-MOS semiconductor memory having high soft error immunity will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-922568