Bi-MOS semiconductor memory having high soft error immunity

Static information storage and retrieval – Read/write circuit – Including signal comparison

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

36518909, 365174, 365177, 365203, 365154, 307279, G11C 700, G11C 800

Patent

active

049425552

ABSTRACT:
A semiconductor memory is provided having high reliability, and which particularly prevents data destruction by rays, and the like. In a semiconductor memory for detecting memory data from the conduction ratio between a transistor of a flip-flop type memory cell connected to selected word line and data line pairs and a load device of the data line, an arrangement is provided for setting the word line voltage to a voltage lower than the sum of the data line voltage and the threshold voltage of a data transfer MOS transistor of the memory cell. The signal read out from the memory cell is then applied through the data line to a differential amplifier using the base or gate of a junction type transistor as its input. Particularly to set the word line voltage to a voltage lower than the sum of the data line voltage and the threshold voltage of the data transfer MOS transistor of the memory cell, a device having high driving capability such as a bipolar transistor is used as the load of the data line. The word line voltage is changed over to two stages so that the data line voltage V.sub.D and the word line voltage V.sub.W satisfy the relation V.sub.W <V.sub.D +V.sub.TH in a read cycle and the relation V.sub.W >V.sub.D +V.sub.TH in a write cycle (where V.sub.TH is the threshold voltage of NMOS inside the memory cell).

REFERENCES:
patent: 4744063 (1988-05-01), Ohtani et al.
patent: 4747083 (1988-05-01), Nakajima et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Bi-MOS semiconductor memory having high soft error immunity does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bi-MOS semiconductor memory having high soft error immunity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bi-MOS semiconductor memory having high soft error immunity will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-99101

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.