Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-10-28
2011-10-11
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S213000, C257S230000, C257S900000, C257S902000, C257S903000, C257SE21190, C257SE21210, C257SE21394, C257SE21458, C257SE21615, C257SE21694, C257SE21435, C257SE21619, C257SE29346, C257SE29325, C257S413000, C257S255000, C257S408000, C257S303000
Reexamination Certificate
active
08035141
ABSTRACT:
A semiconductor structure including a bi-layer nFET embedded stressor element is disclosed. The bi-layer nFET embedded stressor element can be integrated into any CMOS process flow. The bi-layer nFET embedded stressor element includes an implant damaged free first layer of a first epitaxy semiconductor material having a lattice constant that is different from a lattice constant of a semiconductor substrate and imparts a tensile strain in a device channel of an nFET gate stack. Typically, and when the semiconductor is composed of silicon, the first layer of the bi-layer nFET embedded stressor element is composed of Si:C. The bi-layer nFET embedded stressor element further includes a second layer of a second epitaxy semiconductor material that has a lower resistance to dopant diffusion than the first epitaxy semiconductor material. Typically, and when the semiconductor is composed of silicon, the second layer of the bi-layer nFET embedded stressor element is composed of silicon. Only the second layer of the bi-layer nFET embedded stressor element includes the implanted source/drain regions.
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International Search Report—Jan. 25, 2011 (PCT/EP2010/065495).
Chan Kevin K.
Dube Abhishek
Li Jinghong
Ontalus Viorel
Zhu Zhengmao
Armand Marc
Fahmy Wael
International Business Machines - Corporation
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
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