Bi-layer etch stop process for defect reduction and via...

Details Bi-layer etch stop process for defect reduction and via... Bi-layer etch stop process for defect reduction and via...

2007-04-03

2007-04-03

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C438S672000, C438S700000

Reexamination Certificate

active

10857150

ABSTRACT:
A method of forming a film stack in an integrated circuit, said method comprising depositing a layer of silicon carbide adjacent a first layer of dielectric material, depositing a layer of silicon nitride adjacent the layer of silicon carbide, and depositing a second layer of dielectric material adjacent the layer of silicon nitride.

REFERENCES:
patent: 6424038 (2002-07-01), Bao et al.
patent: 6720249 (2004-04-01), Dalton et al.
patent: 2004/0127016 (2004-07-01), Hoog et al.
patent: 2004/0198070 (2004-10-01), Xia et al.
patent: 2005/0110153 (2005-05-01), Wu et al.
IEEE International Reliability Physics Symposium, Mar. 30-Apr. 3, 2003, Dallas, Texas, Technical Program, 14 p., [online] http://www.irps.org/03-41st/TP—abstracts.pdf.

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