Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-10-11
1995-07-04
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257332, 257333, 257334, 257403, H01L 2910, H01L 2978
Patent
active
054303150
ABSTRACT:
A trench MOSFET that includes a charge carrier getter region to substantially deplete a plurality of body regions during an off-state of this MOSFET to produce a very low off-state leakage current. In a first class of embodiments, this charge carrier getter region is a thin layer of material, of opposite conductivity type to that of the body regions, and located between a plurality of gate regions and the body regions. In a second class of embodiments, the gate regions are of opposite conductivity type to the body regions to function as a charge carrier getter region as well as a gate region.
REFERENCES:
patent: 4929987 (1990-05-01), Einthoven
patent: 5008725 (1991-04-01), Lidow et al.
patent: 5136350 (1992-08-01), Itoh
patent: 5293053 (1994-03-01), Malhi et al.
Daisuke Ueda, et al, An Ultra-Low On-Resistance Power MOSFET . . . , IEEE Transactions on Electron Devices, vol. ED-34, No. 4, Apr. 1987.
B. Jayant Baliga, et al, The Accumulation-Mode Field-Effect Transstor . . . , IEEE Electron Device Letters, vol. 13, No. 8, Aug. 1992.
Frazzini John A.
Ngo Ngan V.
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