Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-10-02
1994-06-21
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257390, 257392, 257395, 257154, 257165, 257167, H01L 2952, H01L 2908
Patent
active
053230442
ABSTRACT:
A bi-directional switch includes a well region of a first conductivity type placed within a substrate. A first region of second conductivity type is placed within the well. A second contact region of second conductivity type is placed within the well. A drift region of second conductivity is placed between the first contact and the second contact. The drift region is separated from the first contact by a first channel region and is separated from the second contact by a second channel region. A first gate region is placed over the first channel region and a second gate region over the second channel region.
REFERENCES:
patent: 5177586 (1993-01-01), Ishimura et al.
Sze, S. M., Semiconductor Devices, Physics and Technology, Bell Laboratories Inc., 1985, pp. 34-38, 376-377.
J. Plummer and J. Meindl, A Monolithic 200-V CMOS Analog Switch, IEEE J. Solid-State Circuits, vol. SC-11, pp. 809-817, 1976.
R. Williams, L. Sevilla, E. Ruetz and J. Plummer, A DI/JI-Compatible Monolithic High-Voltage Multiplexer, IEEE Trans. Electron Devices, vol. ED-33, pp. 1977-1984, Dec. 1986.
B. Collins, The Photo Voltaic Relay: A New Solid State Control Device, An Application Note presented at the National Association of Relay Manufactures (NARM) Apr. 24, 1985.
Grabowski Wayne B.
Rumennik Vladimir
Hardy D.
Mintel William
Power Integrations, Inc.
Weller Douglas L.
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