Bi-directional MOSFET power switch with single metal layer

Details Bi-directional MOSFET power switch with single metal layer Bi-directional MOSFET power switch with single metal layer

2007-07-03

2009-10-20

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S007000, C257S121000, C257S124000, C257S341000, C257S342000, C257S393000, C257SE27001, C257SE27070, C257SE27108, C257SE27121, C257SE29001, C257SE29325

Reexamination Certificate

active

07605435

ABSTRACT:
A bi-directional power switch is formed as a monolithic semiconductor device. The power switch has two MOSFETs formed with separate source contacts to the external package and a common drain. The MOSFETs have first and second channel regions formed over a well region above a substrate. A first source is formed in the first channel. A first metal makes electrical contact to the first source. A first gate region is formed over the first channel. A second source region is formed in the second channel. A second metal makes electrical contact to the second source. A second gate region is formed over the second channel. A common drain region is disposed between the first and second gate regions. A local oxidation on silicon region and field implant are formed over the common drain region. The metal contacts are formed in the same plane as a single metal layer.

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