Bi-directional EOS/ESD protection device

Details Bi-directional EOS/ESD protection device Bi-directional EOS/ESD protection device

2006-04-25

2006-04-25

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S356000, C257S173000

Reexamination Certificate

active

07034363

ABSTRACT:
A bi-directional EOS/ESD protection device, suitable for application on an I/O port. The circuit includes a P-type semiconductor layer, a first N-type conductive layer, a second N-type conductive layer, a first P-type doped region, a first N-type doped region, a second N-type doped region and a second P-type doped region. The first N-type conductive layer and the second N-type conductive layer are formed separately on the P-type semiconductor layer. The first P-type doped region and the first N-type doped region are formed on the first N-type conductive layer. The second N-type doped region and the second P-type doped region are formed on the second N-type conductive layer. The first N-type conductive layer is coupled to an I/O pad, and the second N-type conductive layer is coupled to a power line. Signals irrespective of conductivity type are transmitted via the I/O pad. When voltages of signals at the I/O pad exceed predetermined amplitude, the bi-directional EOS/ESD protection device is triggered to release the ESD stress and protect an inner circuit.

REFERENCES:
patent: 6236087 (2001-05-01), Daly et al.

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