Bi-based ferroelectric composition and thin film, method for for

Details Bi-based ferroelectric composition and thin film, method for for Bi-based ferroelectric composition and thin film, method for for

1996-11-15

1998-11-10

Klemanski, Helene

Compositions: coating or plastic

Coating or plastic compositions

Heavy metal compound containing

427226, 501134, C04B 3550, C23C 1800, B05D 302

Patent

active

058337458

ABSTRACT:
A composition for forming a film, comprising a solution of metal compounds in an organic solvent, wherein a molar ratio of metals in said solution is (Sr.sub.1-n R.sub.n):Bi:(Ta.sub.Y Nb.sub.1-Y)=X:Q:2, R is at least one element selected from the group consisting of La, Ce, Pr, Nd, Eu, Sm, Tb, Gd and Er, and 0<n.ltoreq.0.1, 0.4.ltoreq.X<1, 0.ltoreq.Y.ltoreq.1 and 1.5.ltoreq.Q.ltoreq.3.5, can be used to form a ferroelectric film. This ferroelectric film is useful in a ferroelectric capacitor, particularly a ferroelectric capacitor for a non-volatile memory.

REFERENCES:
patent: 5426075 (1995-06-01), Perino et al.
patent: 5605723 (1997-02-01), Ogi et al.
patent: 5630872 (1997-05-01), Ogi et al.
patent: 5645643 (1997-07-01), Ogi et al.
patent: 5645885 (1997-07-01), Nishimoto

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