Bi-based dielectric thin films, and compositions and method for

Details Bi-based dielectric thin films, and compositions and method for Bi-based dielectric thin films, and compositions and method for

1996-05-22

1998-09-15

Chang, Ceila

Compositions

Piezoelectric

252572, 438482, 438485, 438486, 438492, 438496, 438502, 20419215, 20419222, 257 43, 257295, 4271263, 427226, 427 62, C04B 3500

Patent

active

058074953

ABSTRACT:
Dielectrics represented by (Sr.sub.x Bi.sub.1-x)Bi.sub.2 Ta.sub.2 O.sub.y, wherein 0<x<1, and y represents the total number of oxygen atoms bonded to the respective metals, and thin films thereof, can be prepared by repeating the steps of applying compositions for forming the Sr--Bi--Ta--O-based dielectric thin films on substrates, drying and conducting a first-firing a plurality of times until the desired film thickness is achieved, and then conducting a second-firing for crystallization and compositions for forming Bi-based ferroelectric thin films and target materials for forming Bi-based ferroelectric thin films, both represented by the metal composition ((Sr.sub.a (Ba.sub.b, Pb.sub.c)).sub.x Bi.sub.y (Ta and/or Nb).sub.z wherein 0.4.ltoreq.X<1.0, 1.5.ltoreq.Y.ltoreq.3.5, Z=2, 0.7X.ltoreq.a<X, and 0<b+c.ltoreq.0.3X can be formed by repeatedly applied onto substrates, dried and subjected to a first-firing a plurality of times until the desired film thickness is achieved, and then subjected to a second-firing for crystallization, while the target materials are used to form films by sputtering, and the films undergo heat treatment during and/or after their formation for crystallization.

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CA:123:356330, Abstr of "Preparation of Bi-based ferroelectric thin films by sol-gel", Jpn J Appl. Physics 34(9B) 5096-9, Jan. 1995.
CA:123273109, Abstr of "c-Axis oriented ferroelectric SrBi2(TaxNb2-x)O9 thin films", Mater. Sci. Eng. B. 83-8, 1995.
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