Bi-axial texturing of high-K dielectric films to reduce...

Details Bi-axial texturing of high-K dielectric films to reduce... Bi-axial texturing of high-K dielectric films to reduce...

2004-12-07

2009-11-17

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000, C257SE29015

Reexamination Certificate

active

07619272

ABSTRACT:
The present invention is directed to a method of fabricating a high-K dielectric films having a high degree of crystallographic alignment at grain boundaries of the film. A disclosed method involves providing a substrate and then depositing a material used in forming the high-K dielectric film and also using an ion beam to assist in the preferential formation of crystal lattices having a selected crystallographic orientation. The resultant dielectric film having a high degree of crystallographic alignment at grain boundaries of the film. Another disclosed method involves providing a substrate and then angularly depositing a material onto the substrate in order to assist in the preferential formation of crystal lattices having a selected crystallographic orientation. The resultant dielectric film having a high degree of crystallographic alignment at grain boundaries of the film.

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patent: 2003179051 (2003-06-01), None
English translation for JP 2003-179051.

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