Beta control using a rapid thermal oxidation

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure

Reexamination Certificate

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C257S526000, C257S552000, C257S585000, C257SE29030

Reexamination Certificate

active

07439607

ABSTRACT:
A method of forming semiconductor device treating a surface of a substrate to produce a discontinuous growth of a material on the surface through rapid thermal oxidation of the substrate surface at a temperature of less than about 700° C.

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Moslehi et al., “Thin SiO2 insulators grown by rapid thermal oxidation of silicon,” Oct. 1985, Applied Physics Letters, vol. 47 (12) pp. 1353-1355.
IBM Technical Disclosure Bulletin, “High Performance FET Technology,” Apr. 1981, vol. 23(23) pp. 4950-4953.

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