Beryllium-gold ohmic contact to a semiconductor device

Details Beryllium-gold ohmic contact to a semiconductor device Beryllium-gold ohmic contact to a semiconductor device

1982-09-07

1983-11-08

James, Andrew J.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 65, 357 71, 427 89, 427125, H01L 2348, H01L 2946, H01L 2962

Patent

active

044145616

ABSTRACT:
An ohmic contact to a semiconductor device comprising p-type InP is formed by sequentially depositing beryllium-gold and gold layers on InP and then heat-treating the device at a temperature less than 440 degrees C. An ohmic contact to p-type InGaAsP can be similarly formed.

REFERENCES:
patent: 3214654 (1965-10-01), Armstrong et al.
patent: 3987480 (1976-10-01), DiGuet et al.
patent: 4000508 (1976-12-01), Hager et al.
patent: 4011583 (1977-03-01), Levinstein
patent: 4022931 (1977-05-01), Black et al.
patent: 4028064 (1977-06-01), Cassidy et al.
patent: 4260429 (1981-04-01), Moyer
patent: 4350990 (1982-09-01), Lo
patent: 4366186 (1982-12-01), Keramidas

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