BEOL interconnect structures and related fabrication methods

Details BEOL interconnect structures and related fabrication methods BEOL interconnect structures and related fabrication methods

2011-08-23

2011-08-23

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S633000, C438S637000, C257SE21580

Reexamination Certificate

active

08003516

ABSTRACT:
Methods for forming voids in BEOL interconnect structures and BEOL interconnect structures. The methods include forming a temporary feature on a top surface of a first dielectric layer and depositing a second dielectric layer on the top surface of the first dielectric layer. The temporary feature is removed from the second dielectric layer to define a void in the second dielectric layer that is laterally adjacent to a conductive feature in the second dielectric layer. The void operates to reduce the effective dielectric constant of the second dielectric layer, which reduces parasitic capacitance between the conductive feature and other conductors in the BEOL interconnect structure.

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