Coating processes – Direct application of electrical – magnetic – wave – or... – Ion plating or implantation
Patent
1997-12-05
2000-07-25
Padgett, Marianne
Coating processes
Direct application of electrical, magnetic, wave, or...
Ion plating or implantation
20429804, 2504923, 250432R, 250400, 31511181, C23C 1448, H01J 2700
Patent
active
060934565
DESCRIPTION:
BRIEF SUMMARY
FIELD OF THE INVENTION
This invention relates to ion implanters for implanting ions from an ion beam into semiconductor wafers, and in particular but not limited to ion implanters capable of implanting ions of more than one specie.
DESCRIPTION OF THE PRIOR ART
In ion beam implantation, an ion beam containing dopant ions is generated and directed toward the surface of a semiconductor wafer to dope the wafer in selected regions defined, for example, by a mask. A known ion implanter, as exemplified in U.S. Pat. No. 4,847,504 to Aitken et al, incorporated herein by reference, comprises an ion beam generator for generating a single beam of ions and which can be controlled so that the specie of ions transported by the beam can be selected. A rotatable support is provided for carrying a plurality of semiconductor wafers, comprising a rotatable hub having spokes extending radially therefrom with the end of each spoke adapted to carry an individual wafer. During ion implantation, the support is rotated at high speed and moved laterally relative to the beam line so that the wafers intercept the beam and become implanted with beam ions. A beam stop for trapping the ion beam during periods when the beam is not implanting wafers or for trapping beam ions which pass the wafers during an implant process is positioned in the beam line, downstream of the wafer support assembly. Typically, the beam stop is used to detect the beam current in dosimetry measurements and during beam tuning.
The continuous goal of reducing device size places higher and higher demands on the accuracy to which the various fabrication processes must be controlled. In ion implantation, it is important to be able to control both the dopant level and depth of implant into the semiconductor wafer with an increasing degree of precision.
It is an object of the present invention to provide a means of improving the quality of ion implant processes.
SUMMARY OF THE INVENTION
According to the present invention, there is provided an ion beam absorbing apparatus for an ion implanter, comprising an ion absorber for absorbing ions in an ion beam generated by said ion implanter, and support means for supporting said ion absorber and adapted for connection with said ion implanter so that, when so connected, said ion absorber can intercept said ion beam and absorb ions not intercepted by a target to be implanted with beam ions, wherein said support means is further adapted for supporting said ion absorber in a plurality of different positions which can be selected so that respective different parts of said ion absorber intercept said beam.
The term "ion absorber" means any device which is suitable for trapping or absorbing ions and includes for example, what are commonly termed in the art as beam stops, beam dumps and Faraday cups or buckets and is to be distinguished from the target or targets, e.g., semiconductor wafers, which are to be implanted with ions.
Also according to the present invention, there is provided a method of operating an ion implanter for implanting ions into a target, comprising implanting ions into at least one target, receiving ions which pass said target on an ion absorber and changing the position of said ion absorber in said ion implanter.
Also according to the present invention, there is provided a method of implanting ions into a target comprising implanting a first predetermined specie of ions into a target, receiving ions which pass said target on an ion absorber and removing ions of said first predetermined specie from said ion absorber before receiving on said ion absorber a specie of ions different to said first predetermined specie of ions.
Also according to the present invention, there is provided a method of implanting ions into a target comprising implanting a first predetermined specie of ions into a target, receiving ions which pass said target on an ion absorber, and replacing said ion absorber with another whose ion absorbing surface is substantially free of ions of said first predetermined specie, before implanting a
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Burgin David R.
England Jonathan Gerald
Todaka Ryoji
Wauk Michael
Applied Materials Inc.
Padgett Marianne
Tennant Boult Wade
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