Beam lead Schottky barrier diode for operation at millimeter and

Details Beam lead Schottky barrier diode for operation at millimeter and Beam lead Schottky barrier diode for operation at millimeter and

1980-06-03

1981-11-17

Smith, John D.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

156649, 156652, 156656, 156664, 427 84, 427 89, 430315, 430316, 430318, H01L 2948

Patent

active

043012337

ABSTRACT:
A beam lead gallium arsenide diode having a rectangular junction perimeter conforming to that the beam lead, recovers ninety-five percent of the junction current and provides an almost perfect ideality factor of 1.07. This device is formed on a semi-insulating substrate to provide for isolation from adjacent devices on the same substrate and for confining the current to a direct path from the junction to an immediately adjacent ohmic contact. An extremely small junction area necessary for operation at millimeter wave frequencies is formed by special processing which includes the use of dry etching and the fabrication of the junction prior to passivation.

REFERENCES:
patent: 3762945 (1973-10-01), DiLorenzo
patent: 4075650 (1978-02-01), Calviello
patent: 4098921 (1978-07-01), Calviello
Fujimoto "Millimeter wave GaAs Diodes," Review of the Electrical Communication Laboratories, vol. 23, No. 7-8, pp. 939-947, Jul. 1975.

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