Beam lead mixer diode

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 47, 357 49, 357 69, 357 71, 156656, H01L 2948, H01L 2348, H01L 2702

Patent

active

048557960

ABSTRACT:
A beam lead diode configuration is described, employing a planar proton bombarded conversion region and a low-permittivity dielectric separator. The diode enjoys the mechanical ruggedness of the conventional planar diodes and the electrical performance of conventional mesa-type diodes. The diode structure results in the absence of N-type mesa structures on the substrate, allowing fabrication by relatively low-cost, high-yield photolithographic processes.

REFERENCES:
patent: 3836988 (1974-09-01), Board
patent: 4301233 (1981-11-01), Calviello
patent: 4499656 (1985-02-01), Fabian et al.
patent: 4577213 (1986-03-01), Bauhahn
Anderson et al., "GaAs Beam Lead Antiparallel Diodes for mm Wave Subharmonic Mixers", pp. 688-691, IEDM 81.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Beam lead mixer diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Beam lead mixer diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Beam lead mixer diode will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-909263

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.