Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-09-26
2006-09-26
Parker, Kenneth (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S487000, C257SE21134
Reexamination Certificate
active
07112477
ABSTRACT:
An optical system (in FIGS.1A and1B) wherein a rectilinear laser beam of homogeneous energy distribution is defined for annealing a non-single crystalline semiconductor film (a surface to-be-irradiated1108), is constructed of reflectors (1106, 1107etc.) easily and inexpensively without including lenses of transmission type. The rectilinear laser beam can be defined having a length of at least 600 (mm) which corresponds to the shorter latus of a large-sized substrate for mass production.
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Diaz José R.
Parker Kenneth
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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