Basic material for patterning and patterning method

Details Basic material for patterning and patterning method Basic material for patterning and patterning method

2006-10-10

2006-10-10

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S750000

Reexamination Certificate

active

07119026

ABSTRACT:
A pattern forming method of the present invention includes the steps of forming, on a substrate before droplets are ejected onto the substrate, a water repelling area, in which a contact angle between the droplet and the target surface is a first contact angle, and a water attracting line, which is adjacent to the water repelling area and in which a second contact angle is smaller than the first contact angle and which is to be the pattern to be formed; and landing droplets onto the target surface such that part of the droplet landed is in a water repelling area and part of the droplet landed is in a water attracting line, the equation (1) is satisfied,in-line-formulae description="In-line Formulae" end="lead"?D≦L×{1+2(cos θ2−cos θ1)}  (1)in-line-formulae description="In-line Formulae" end="tail"?where D is a droplet diameter, L is a pattern width, θ1is a first contact angle, and θ2is a second contact angle. By decreasing the number of discharged droplets, it is possible to prevent increase of a tact time and decrease of an inkjet operating life.

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