Basic cell of gate array semiconductor device, gate array...

Details Basic cell of gate array semiconductor device, gate array... Basic cell of gate array semiconductor device, gate array...

2005-01-11

2005-01-11

Siek, Vuthe (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000, C716S030000

Reexamination Certificate

active

06842886

ABSTRACT:
A basic cell of a gate array semiconductor device, including first and second p-channel MOS transistors and first and second n-channel MOS transistors, wherein the first p-channel MOS transistor and the first n-channel MOS transistor are disposed so as to share or divide a first gate, the second p-channel MOS transistor and the second n-channel MOS transistor are disposed to share or divide a second gate, and the first and second gates have portions bent at about 45 degrees with respect to a lengthwise direction.

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