Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2011-04-12
2011-04-12
Kelly, Cynthia H (Department: 1722)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S311000, C430S322000
Reexamination Certificate
active
07923192
ABSTRACT:
A base material for a pattern-forming material, a positive resist composition, and a method of resist pattern formation that are capable of forming a high resolution pattern with reduced levels of LER. The base material includes a low molecular weight compound (X1), which is formed from a polyhydric phenol compound (x) that contains two or more phenolic hydroxyl groups and satisfies the conditions (1), (2), and (3) described below, wherein either a portion of, or all of, the phenolic hydroxyl groups are protected with acid dissociable, dissolution inhibiting groups: (1) a molecular weight within a range from 300 to 2,500, (2) a molecular weight dispersity of no more than 1.5, and (3) an ability to form an amorphous film using a spin coating method. Alternatively, the base material includes a protected material (Y1), which is formed from a polyhydric phenol compound (y) that contains two or more phenolic hydroxyl groups and has a molecular weight within a range from 300 to 2,500, in which a predetermined proportion of the phenolic hydroxyl groups are protected with acid dissociable, dissolution inhibiting groups.
REFERENCES:
patent: 5658706 (1997-08-01), Niki et al.
patent: 5693452 (1997-12-01), Aoai et al.
patent: 5707776 (1998-01-01), Kawabe et al.
patent: 5824451 (1998-10-01), Aoai et al.
patent: 5837420 (1998-11-01), Aoai et al.
patent: 5844057 (1998-12-01), Watanabe et al.
patent: 5994025 (1999-11-01), Iwasa et al.
patent: 6037098 (2000-03-01), Aoai et al.
patent: 6106993 (2000-08-01), Watanabe et al.
patent: 6197473 (2001-03-01), Kihara et al.
patent: 6638683 (2003-10-01), Tan et al.
patent: 7220808 (2007-05-01), Yamagishi et al.
patent: 7504196 (2009-03-01), Shiono et al.
patent: 2002/0025495 (2002-02-01), Ogata et al.
patent: 2002/0058205 (2002-05-01), Nakashima et al.
patent: 2003/0232277 (2003-12-01), Sasaki et al.
patent: 2004/0005512 (2004-01-01), Mizutani et al.
patent: 2004/0234885 (2004-11-01), Watanabe et al.
patent: 2005/0271971 (2005-12-01), Ueda et al.
patent: 2007/0259273 (2007-11-01), Shiono et al.
patent: 2007/0281243 (2007-12-01), Hirayama
patent: 2008/0020288 (2008-01-01), Hirayama et al.
patent: 2008/0145784 (2008-06-01), Shiono et al.
patent: 2009/0162781 (2009-06-01), Shiono et al.
patent: 05-061197 (1993-03-01), None
patent: H5-249681 (1993-09-01), None
patent: H06-059444 (1994-03-01), None
patent: 06-167811 (1994-06-01), None
patent: H06-266109 (1994-09-01), None
patent: 08-193054 (1996-07-01), None
patent: H08-220740 (1996-08-01), None
patent: H08-262712 (1996-10-01), None
patent: H08-337616 (1996-12-01), None
patent: H8-337616 (1996-12-01), None
patent: 09-005999 (1997-01-01), None
patent: H9-160246 (1997-06-01), None
patent: H09-211866 (1997-08-01), None
patent: H10-123703 (1998-05-01), None
patent: H10-274845 (1998-10-01), None
patent: A-11-153863 (1999-06-01), None
patent: H11-167199 (1999-06-01), None
patent: H11-199533 (1999-07-01), None
patent: 2000-086584 (2000-03-01), None
patent: 2000-305270 (2000-11-01), None
patent: 2000-330282 (2000-11-01), None
patent: 2001312055 (2001-11-01), None
patent: 2002-055452 (2002-02-01), None
patent: 2002-099088 (2002-04-01), None
patent: 2002-099089 (2002-04-01), None
patent: 2002-221787 (2002-08-01), None
patent: A-2002-328473 (2002-11-01), None
patent: 2003-030282 (2003-01-01), None
patent: A-2003-084437 (2003-03-01), None
patent: 2003-183227 (2003-07-01), None
patent: 2003-260881 (2003-09-01), None
patent: 2004-062049 (2004-02-01), None
patent: 2004-125835 (2004-04-01), None
patent: 2004-151605 (2004-05-01), None
patent: A-2004-191913 (2004-07-01), None
patent: 2004-302440 (2004-10-01), None
patent: 2004-359590 (2004-12-01), None
patent: 205-091909 (2005-04-01), None
patent: 2005-089387 (2005-04-01), None
patent: 2005-309421 (2005-11-01), None
patent: 0231242 (1997-05-01), None
patent: 2001-0088341 (2001-09-01), None
patent: 406242 (2003-11-01), None
patent: 200302397 (2003-08-01), None
patent: 200617602 (2006-06-01), None
patent: WO 2006/046383 (2006-05-01), None
JP 2001-312055 English Translation.
Hirayama et al., “Development of Amorphous Polyphenol Resists with Low Molecular Weight and Narrow Dispersion for EB Lithography”, IEEE Xplore, pp. 10-11, Oct. 22, 2004.
Office Action and Search Report issued on May 12, 2008, on the counterpart Taiwanese Patent Application No. 094104523.
Yamaguchi et al.,Linewidth fluctuations caused by polymer aggregates in resist films, Journal of Photopolymer Science and Technology, vol. 10 No. 4, pp. 635-640, (1997).
Office Action issued on May 27, 2008, on the counterpart Japanese Application No. 2004-182300.
Office Action issued on Jun. 3, 2008, on the counterpart Japanese Application No. 2004-182301.
Office Action issued on Aug. 26, 2008, on the counterpart Japanese Patent Application No. 2004-182301.
Office Action issued in corresponding Japanese Patent Application No. 2004-260764, dated Mar. 3, 2009.
Hirayama et al. “Development of Electron Beam Resists Based on Amorphous Polyphenols with Low Molecular Weight and Narrow Dispersion” Proceedings of SPIE vol. 5753, p. 738-745.
Hirayama et al., Journal of Photopolymer Science and Technology, vol. 17, No. 3, 435-440, (2004).
Hirayama, T., et al. “Depth Profile and Line-Edge Roughness of Low-Molecular-Weight Amorphous Electron Beam Resists”, The Japan Journal of Applied Physics, vol. 44, No. 7B, 2005, pp. 5484-5488.
International Search Report dated Sep. 6, 2005 for PCT/JP2005/013564.
International Search Report from PCT/JP2005/018143 dated Nov. 15, 2005.
International Search Report from PCT/JP2006/302271, mailed on Mar. 7, 2006.
International Search Report in connection with corresponding PCT application No. PCT/JP2006/313103, dated Sep. 26, 2006.
International Search Report issued in corresponding PCT Application No. PCT/JP2006/311443, dated Jun. 7, 2006.
International Search Report, PCT/JP2006/301679, Feb. 16, 2006.
Office Action issued Sep. 16, 2008 on the counterpart Korean Patent Application No. 10-2007-7010473.
Notice of Allowance issued on related Korean Patent Application No. 10-2009-7006750, dated Feb. 16, 2010.
Office Action issued in counterpart Japanese Patent Application No. 2005-026266, dated Mar. 3, 2009.
Office Action issued in counterpart Japanese Patent Application No. JP 2005-050721, dated Jul. 28, 2009.
Office Action issued in counterpart Japanese Patent Application No. JP 2005-050721, dated Mar. 3, 2009.
Office Action issued in counterpart Korean Patent Application No. 10-2007-7017441, dated May 7, 2009.
Office Action issued in Korean Patent Application No. 10-2007-7004390, dated Dec. 17, 2008.
Office Action issued in Korean Patent Application No. 10-2008-7025851, dated Jan. 7, 2009.
Office Action issued on Apr. 14, 2008 on the counterpart Korean Patent Application No. 10-2007-7004390.
Office Action issued on the counterpart Korean Patent Application No. 10-2007-7019433, dated Jun. 5, 2008.
Hirayama et al, “Development of Amorphous PolyPhenol Resists with Low Molecular Weight and Narrow Dispersion for EB Lithography”, IEEE Xplore, Oct. 22, 2004, pp. 10-11.
Notice of Allowance issued on corresponding Japanese Patent Application No. 2004-260764, dated Feb. 16, 2010.
Decision to Grant a Patent issued in corresponding Japanese Patent Application No. 2004-182301, dated Jan. 6, 2009.
European Search Report issued in related European Patent Application No. EP 06732357.6, dated Aug. 30, 2010.
European Search Report issued in related European Patent Application No. EP 05788289.6, dated Jul. 26, 2010.
Hirayama Taku
Kinoshita Yohei
Matsumiya Tasuku
Shiono Daiju
Johnson Connie P
Kelly Cynthia H
Knobbe Martens Olson & Bear LLP
Tokyo Ohka Kogyo Co. Ltd.
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