Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2006-02-28
2006-02-28
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C216S058000, C216S065000, C438S460000, C438S463000, C438S708000
Reexamination Certificate
active
07005081
ABSTRACT:
This invention discloses an ingot cutting apparatus, wherein a crystalline ingot is positioned within an etching gas and a component of the etching gas is excited by illumination of light from a light source onto the crystalline ingot, thereby making a component of the etching gas react chemically with the component of the crystalline ingot and volatilizing the component of the crystalline ingot to cut the crystalline ingot and obtain wafers and wherein light from a light source is guided to the crystalline ingot via a sheet-like, bar-like, or fiber-like optical wave guide.
REFERENCES:
patent: 5912186 (1999-06-01), Yoshino et al.
patent: 5990497 (1999-11-01), Kamakura et al.
patent: 6058498 (2000-05-01), Nagasaki et al.
patent: 9-141645 (1997-06-01), None
Kawase Nobuo
Ohta Masakatsu
Tanaka Nobuyoshi
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