Base material cutting method, base material cutting...

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

Reexamination Certificate

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C216S058000, C216S065000, C438S460000, C438S463000, C438S708000

Reexamination Certificate

active

07005081

ABSTRACT:
This invention discloses an ingot cutting apparatus, wherein a crystalline ingot is positioned within an etching gas and a component of the etching gas is excited by illumination of light from a light source onto the crystalline ingot, thereby making a component of the etching gas react chemically with the component of the crystalline ingot and volatilizing the component of the crystalline ingot to cut the crystalline ingot and obtain wafers and wherein light from a light source is guided to the crystalline ingot via a sheet-like, bar-like, or fiber-like optical wave guide.

REFERENCES:
patent: 5912186 (1999-06-01), Yoshino et al.
patent: 5990497 (1999-11-01), Kamakura et al.
patent: 6058498 (2000-05-01), Nagasaki et al.
patent: 9-141645 (1997-06-01), None

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