Barrier metal composite layer featuring a thin plasma vapor depo

Details Barrier metal composite layer featuring a thin plasma vapor depo Barrier metal composite layer featuring a thin plasma vapor depo

1999-09-03

2000-11-14

Smith, Matthew

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438297, 438584, 438597, 438618, H01L 2144

Patent

active

061469912

ABSTRACT:
A process for fabricating a tungsten plug, in a deep, small diameter opening, featuring a novel adhesive-barrier composite layer, located along the sides of the deep, small diameter opening, has been developed. The process features the use of a first titanium nitride barrier layer, deposited on an underlying titanium adhesive layer, via chemical vapor deposition procedures, used to enhance the conformality properties of the first titanium nitride barrier layer. A second titanium nitride barrier layer is then deposited, via plasma vapor deposition procedures, protecting the underlying CVD titanium nitride layer from the environment, while providing an improved surface for subsequent nucleation of a CVD tungsten layer.

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