Barrier materials for semiconductor devices

Details Barrier materials for semiconductor devices Barrier materials for semiconductor devices

1997-12-31

1999-12-14

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257761, 257762, 257763, 257764, 257765, 257766, H01L 2348, H01L 2352, H01L 2940

Patent

active

060021748

ABSTRACT:
A barrier material deposited as a barrier film layer in a semiconductor device to reduce the interdiffusion of materials of varying electrical conductivity comprising adjacent layers in a semiconductor device is provided. The barrier material contains a transition metal, aluminum, silicon and nitrogen as essential ingredients. Suitable transition metals are tantalum and titanium. The material provides excellent resistance to diffusion across the range of temperatures occurring in an integrated circuit manufacturing process. The material also exhibits good adhesion to materials used in semiconductor processes.

REFERENCES:
patent: 4990997 (1991-02-01), Nishida
patent: 5093710 (1992-03-01), Higuchi
patent: 5231306 (1993-07-01), Meikle et al.

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