Barrier materials for metal interconnect

Details Barrier materials for metal interconnect Barrier materials for metal interconnect

1998-11-04

2000-11-21

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438685, 438653, 438687, H01L 2144

Patent

active

061502685

ABSTRACT:
A method is provided for manufacturing a semiconductor device by: depositing a tantalum layer to line the channels and vias of a semiconductor; depositing a tungsten nitride layer at a low temperature on the tantalum layer; and depositing a copper conductor layer on the tungsten nitride layer. The tungsten nitride acts as a highly efficient copper barrier material with high resistivity while the tantalum layer acts as a conductive barrier material to reduce the overall resistance of the barrier layer.

REFERENCES:
patent: 4985750 (1991-01-01), Hoshino
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5714418 (1998-02-01), Bai et al.
patent: 5738917 (1998-04-01), Besser et al.
B. L. Park, et al. "Characteristics of photo-assisted LPCVD tungsten nitride: Adv. Metallization and Interconn, Syst. for ULSI,", Mater. Res. Soc. pp. 283-288, Conf. Oct. 1996, 1997.

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