Barrier material

Details Barrier material Barrier material

2005-08-23

2005-08-23

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000, C438S003000

Reexamination Certificate

active

06933549

ABSTRACT:
A barrier layer protecting, for example, a ferroelectric capacitor from hydrogen is described. The barrier layer comprises aluminum oxide with barrier enhancement dopants. The barrier enhancement dopants are selected from Ti, Hf, Zr, their oxides, or a combination thereof.

REFERENCES:
patent: 6249014 (2001-06-01), Bailey
patent: 6395612 (2002-05-01), Amanuma
patent: 6611014 (2003-08-01), Kanaya et al.
patent: 6630702 (2003-10-01), Zhang et al.
patent: 6642100 (2003-11-01), Yang et al.
patent: 2001/0015430 (2001-08-01), Hartner et al.
patent: 2001/0034106 (2001-10-01), Moise et al.
patent: 2001/0044205 (2001-11-01), Gilbert et al.
patent: 2002/0195633 (2002-12-01), Nagano et al.
patent: 2001036026 (2001-02-01), None

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