Barrier layers and aluminum contacts

Details Barrier layers and aluminum contacts Barrier layers and aluminum contacts

1993-02-12

1995-01-03

Kunemund, Robert

Fishing, trapping, and vermin destroying

437192, 20419215, 20419217, 20419222, 20419225, 148DIG3, H01L 21324, H01L 2144, C23C 1400

Patent

active

053786602

ABSTRACT:
In the manufacture of high temperature deposited aluminum contacts onto silicon substrates wherein a barrier layer of titanium nitride is used, the improvement wherein the titanium nitride contains oxygen. The improved contacts are made by depositing a titanium-containing layer onto a silicon substrate, performing a first, high temperature nitrogen anneal in vacuum to form a low resistance TiSi.sub.x contact to the silicon, and performing a second, lower temperature anneal in vacuum using a mixture of nitrogen and oxygen to add oxygen to the titanium nitride layer. This oxygen-containing titanium nitride layer provides an improved barrier to a subsequently deposited high temperature deposited aluminum layer.

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patent: 4951601 (1990-08-01), Maydan et al.
Park et al, "AL-PLAPH . . . " IEEE VMIC Conf. pp. 326-328.
Nulman et al "Titanium Silicide and Titanium Nitride Layers . . . " IEEE 1991 Multilayer Inconnect Conf. Jun. 11-13.
Osburn, Derwent Abs. 007229892 RD2759002.

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