Barrier layer stack to prevent Ti diffusion

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257SE23160

Reexamination Certificate

active

07470992

ABSTRACT:
A barrier layer stack. The barrier layer stack includes a semiconductor process wafer comprising an exposed conductive region, a first barrier layer stack comprising at least one TiN and one Ti layers overlying and contacting the conductive region, wherein the TiN layer is contacted with the Ti layer, and an overlying aluminum alloy layer in contact with the first barrier layer stack.

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patent: 6617231 (2003-09-01), Griffin et al.
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patent: 2002/0030274 (2002-03-01), Chopra
patent: 2003/0170975 (2003-09-01), Griffin et al.

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