Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-06-02
2008-12-30
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23160
Reexamination Certificate
active
07470992
ABSTRACT:
A barrier layer stack. The barrier layer stack includes a semiconductor process wafer comprising an exposed conductive region, a first barrier layer stack comprising at least one TiN and one Ti layers overlying and contacting the conductive region, wherein the TiN layer is contacted with the Ti layer, and an overlying aluminum alloy layer in contact with the first barrier layer stack.
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Chen Li-Don
Cheng Chun-Lung
Lai Tung-Lung
Lin Chi-Lung
Lin Hsi-Chien
Coleman W. David
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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