Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
257751, H01G 406
A ferroelectric cell in which a ferroelectric stack of a perovskite ferroelectric sandwiched by cubic perovskite metal-oxide conductive electrodes are formed over a silicon body, such as a polysilicon plug penetrating a field oxide over a silicon transistor. According to the invention, an oxidation barrier is placed between the lower metal-oxide electrode and the polysilicon. The oxidation barrier may be: (1) a refractory metal sandwiched between two platinum layer which forms a refractory oxide in a platinum matrix; (2) an intermetallic barrier beneath a platinum electrode, e.g., of NiAl; or (3) a combination of Ru and SrRuO.sub.3 or similar materials. Thereby, the polysilicon plug is protected from oxidation.
patent: 4423087 (1983-12-01), Howard et al.
patent: 4495222 (1985-01-01), Anderson et al.
patent: 5122477 (1992-06-01), Wolters et al.
patent: 5130275 (1992-07-01), Dion
patent: 5146299 (1992-09-01), Lampe
patent: 5155658 (1992-10-01), Inam et al.
patent: 5168420 (1992-12-01), Ramesh et al.
patent: 5248564 (1993-09-01), Ramesh
patent: 5270298 (1993-12-01), Ramesh
patent: 5449933 (1995-09-01), Shindo et al.
patent: 5468684 (1995-11-01), Yoshimori et al.
patent: 5471084 (1995-11-01), Suzuki et al.
patent: 5471363 (1995-11-01), Mihara
patent: 5479317 (1995-12-01), Ramesh
patent: 5519235 (1996-05-01), Ramesh
patent: 5554866 (1996-09-01), Nishioka et al.
patent: 5555486 (1996-09-01), Kingon et al.
patent: 5561307 (1996-10-01), Mihara et al.
patent: 5563762 (1996-10-01), Leung et al.
patent: 5593914 (1997-01-01), Evans, Jr. et al.
patent: 5604145 (1997-02-01), Hashizume et al.
patent: 5665628 (1997-09-01), Summerfelt
Bell Communications Research Inc.
Bowers Jr. Charles L.
Hey David A.
Barrier layer for ferroelectric capacitor integrated on silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.If you have personal experience with Barrier layer for ferroelectric capacitor integrated on silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Barrier layer for ferroelectric capacitor integrated on silicon will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-886929