Barrier layer for ferroelectric capacitor integrated on silicon

Details Barrier layer for ferroelectric capacitor integrated on silicon Barrier layer for ferroelectric capacitor integrated on silicon

1997-06-10

1998-11-17

Bowers, Jr., Charles L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257751, H01G 406

Patent

active

058380353

ABSTRACT:
A ferroelectric cell in which a ferroelectric stack of a perovskite ferroelectric sandwiched by cubic perovskite metal-oxide conductive electrodes are formed over a silicon body, such as a polysilicon plug penetrating a field oxide over a silicon transistor. According to the invention, an oxidation barrier is placed between the lower metal-oxide electrode and the polysilicon. The oxidation barrier may be: (1) a refractory metal sandwiched between two platinum layer which forms a refractory oxide in a platinum matrix; (2) an intermetallic barrier beneath a platinum electrode, e.g., of NiAl; or (3) a combination of Ru and SrRuO.sub.3 or similar materials. Thereby, the polysilicon plug is protected from oxidation.

REFERENCES:
patent: 4423087 (1983-12-01), Howard et al.
patent: 4495222 (1985-01-01), Anderson et al.
patent: 5122477 (1992-06-01), Wolters et al.
patent: 5130275 (1992-07-01), Dion
patent: 5146299 (1992-09-01), Lampe
patent: 5155658 (1992-10-01), Inam et al.
patent: 5168420 (1992-12-01), Ramesh et al.
patent: 5248564 (1993-09-01), Ramesh
patent: 5270298 (1993-12-01), Ramesh
patent: 5449933 (1995-09-01), Shindo et al.
patent: 5468684 (1995-11-01), Yoshimori et al.
patent: 5471084 (1995-11-01), Suzuki et al.
patent: 5471363 (1995-11-01), Mihara
patent: 5479317 (1995-12-01), Ramesh
patent: 5519235 (1996-05-01), Ramesh
patent: 5554866 (1996-09-01), Nishioka et al.
patent: 5555486 (1996-09-01), Kingon et al.
patent: 5561307 (1996-10-01), Mihara et al.
patent: 5563762 (1996-10-01), Leung et al.
patent: 5593914 (1997-01-01), Evans, Jr. et al.
patent: 5604145 (1997-02-01), Hashizume et al.
patent: 5665628 (1997-09-01), Summerfelt

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