Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-17
2005-05-17
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S643000, C438S653000, C438S763000, C438S775000
Reexamination Certificate
active
06893956
ABSTRACT:
The effect of resist poisoning may be eliminated or at least substantially reduced in the formation of a low-k metallization layer, in that a nitrogen-containing barrier/etch stop layer is provided with a significantly reduced nitrogen concentration at an interface in contact with said low-k dielectric material. Consequently, diffusion of nitrogen and nitrogen compounds in vias formed in said low-k dielectric layer is significantly suppressed, so that in a subsequent photolithographic step, interaction of nitrogen and nitrogen compounds with the photoresist is remarkably reduced.
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Aminpur Massud
Hohage Joerg
Ruelke Hartmut
Werner Thomas
Advanced Micro Devices , Inc.
Lee Hsien-Ming
Williams Morgan & Amerson P.C.
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