Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-10-18
1997-04-29
Wilczewski, Mary
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
4271263, 427435, 438768, H01L 2128, H01L 21288
Patent
active
056248741
ABSTRACT:
The properties of a diffusion barrier material layer over a semiconductor substrate are enhanced in a simple and time-effective manner by immersing the substrate in an oxidizing liquid. For a titanium-tungsten barrier metal, a dip in nitric acid for 1-60 minutes provides the metal with an oxide layer of the right thickness of 10-20 .ANG..
REFERENCES:
patent: 4104424 (1978-08-01), Steinbrecher et al.
patent: 4176206 (1979-11-01), Inoue
patent: 4199624 (1980-04-01), Smith
patent: 4373050 (1983-02-01), Steinbrecher et al.
patent: 4696098 (1987-09-01), Yen
patent: 4744858 (1988-05-01), McDavid et al.
patent: 4787958 (1988-11-01), Lytle
patent: 4814293 (1989-03-01), Van Oekel
patent: 4990997 (1991-02-01), Nishida
patent: 5019234 (1991-05-01), Harper
patent: 5073408 (1991-12-01), Goda et al.
patent: 5093710 (1992-03-01), Higuchi
H.G. Tompkins et. al., "An investigation of the oxidation of Ti:W", J. Appl. Phys. 64(6), 15 Sep. 1988, pp. 3269-3272.
J.-S. Maa et al., "Reflectivity reduction by oxygen plasma treatment of capped metallization layer", J. Vac. Sci. Technol. B7(2), Mar./Apr. 1989, pp.145-149.
Chu Stanley C.
Lim Sheldon C. P.
Balconi-Lamica Michael J.
Drumheller Ronald
North America Philips Corporation
Tierney Daniel E.
Wilczewski Mary
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