Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-01-02
2007-01-02
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21076
Reexamination Certificate
active
10653599
ABSTRACT:
A dielectric barrier layer composed of a metal oxide is applied in thin layers with a thickness of less than 20 nanometers in the course of processing semiconductor devices by sequential gas phase deposition or molecular beam epitaxy in molecular individual layers on differently structured base substrates. The method allows, inter alias, effective conductive diffusion barriers to be formed from a dielectric material, an optimization of the layer thickness of the barrier layer, an increase in the temperature budget for subsequent process steps, and a reduction in the effort for removing the temporary barrier layers.
REFERENCES:
patent: 5736192 (1998-04-01), Okamoto
patent: 5981350 (1999-11-01), Geusic et al.
patent: 6144050 (2000-11-01), Stumborg et al.
patent: 6153523 (2000-11-01), Van Ngo et al.
patent: 6391803 (2002-05-01), Kim et al.
patent: 6518671 (2003-02-01), Yang et al.
patent: 6583464 (2003-06-01), Bertagnolli et al.
patent: 6593633 (2003-07-01), Jan et al.
patent: 2001/0044180 (2001-11-01), Schrems et al.
patent: 2002/0014647 (2002-02-01), Seidl et al.
patent: 100 19 090 (2001-10-01), None
patent: 100 34 003 (2002-01-01), None
patent: 101 01 526 (2002-08-01), None
patent: 738002 (1996-10-01), None
K.H. Küsters et al.: “A Stacked Capacitor Cell with a Fully Self-Aligned Contact Process for High-Density Dynamic Random Access Memories”,J. Electrochem. Soc., vol. 139, No. 8, Aug. 1992, pp. 2318-2322.
Birner Albert
Gutsche Martin
Hecht Thomas
Jakschik Stefan
Kudelka Stephan
Greenberg Laurence A.
Infineon - Technologies AG
Kebede Brook
Locher Ralph E.
Stemer Werner H.
LandOfFree
Barrier layer and a method for suppressing diffusion... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Barrier layer and a method for suppressing diffusion..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Barrier layer and a method for suppressing diffusion... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3782875