Barrier layer

Details Barrier layer Barrier layer

1997-06-16

1999-05-04

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257758, 257760, 257762, H01L 2348, H01L 2352, H01L 2940

Patent

active

059006722

ABSTRACT:
A structure and method for making copper interconnections in an integrated circuit are described. The structure is a damascene copper connector whose upper surface is coplanar with the upper surface of the insulating layer in which it is embedded. Out-diffusion of copper from the connector is prevented by two barrier layers. One is located at the interface between the connector and the insulating layer while the second barrier is an insulating layer which covers the upper surface of the connector. The damascene process involves filling a trench in the surface of the insulator with copper and then removing the excess by chem.-mech. polishing. Since photoresist is never in direct contact with the copper the problem of copper oxidation during resist ashing has been effectively eliminated.

REFERENCES:
patent: 4910169 (1990-03-01), Hoshino
patent: 4931410 (1990-06-01), Tokunaga et al.
patent: 4985750 (1991-01-01), Hoshino
patent: 5084412 (1992-01-01), Nakasaki
patent: 5447599 (1995-09-01), Li et al.
patent: 5447887 (1995-09-01), Filipiak et al.
patent: 5656860 (1997-08-01), Lee

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