Barrier film integrity on porous low k dielectrics by...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S771000, C257S762000, C257S750000

Reexamination Certificate

active

11476971

ABSTRACT:
A method for treating a dielectric material using hydrocarbon plasma is described, which allows for thinner films of barrier material to be used to form a robust barrier.

REFERENCES:
patent: 5243222 (1993-09-01), Harper et al.
patent: 6229211 (2001-05-01), Kawanoue et al.
patent: 6677678 (2004-01-01), Biolsi et al.
patent: 7067925 (2006-06-01), Abell

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Barrier film integrity on porous low k dielectrics by... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Barrier film integrity on porous low k dielectrics by..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Barrier film integrity on porous low k dielectrics by... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3798409

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.