Thin-film piezoelectric element and method of making same

Details Thin-film piezoelectric element and method of making same Thin-film piezoelectric element and method of making same

2007-07-24

2007-07-24

Budd, Mark (Department: 2834)

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

C310S340000, C310S364000, C310S366000

Reexamination Certificate

active

11078565

ABSTRACT:
Provided is a thin-film piezoelectric element which reduces the influence of an oxide film left on the electrode film on the degradation of element characteristics, and a method of making the thin-film piezoelectric element. The thin-film piezoelectric element has ZrO2as the main component of the outermost layer of the oxide film which covers the laminate. Young's modulus of the ZrO2is 190 GPa, giving a significantly low value compared with Young's modulus of MgO, 245 GPa. Consequently, the influence of the oxide film on the reduction in the displacement magnitude of the piezoelectric film is smaller than the influence of the MgO thin film left in the conventional thin-film piezoelectric element. As a result, the thin-film piezoelectric element decreases the influence of the oxide film on the degradation of element characteristics compared with the conventional thin-film piezoelectric element.

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