Barrier film integrity on porous low k dielectrics by...

Details Barrier film integrity on porous low k dielectrics by... Barrier film integrity on porous low k dielectrics by...

2005-10-04

2005-10-04

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000

Reexamination Certificate

active

06951810

ABSTRACT:
A method for treating a dielectric material using hydrocarbon plasma is described, which allows for thinner films of barrier material to be used to form a robust barrier.

REFERENCES:
patent: 6399511 (2002-06-01), Tang et al.
patent: 2002/0068435 (2002-06-01), Tsai et al.

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