Barrier enhancement

Details Barrier enhancement Barrier enhancement

2005-09-27

2005-09-27

Ngô, Ngân V. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000, C438S631000, C438S639000, C438S643000, C438S645000, C438S648000, C438S653000, C438S656000, C438S704000, C438S745000, C257S751000, C257S758000, C257S762000, C257S764000

Reexamination Certificate

active

06949457

ABSTRACT:
A method of forming an electrically conductive via. A first electrically conductive layer is formed, and a second layer is formed on the first layer. The second layer has desired barrier layer properties. A third non electrically conductive layer is formed on the second layer. A via hole is etched through the third layer, thereby exposing a portion of the second layer at the bottom of the via hole. The exposed portion of the second layer at the bottom of the via hole is redistributed so that at least a portion of the second layer is removed from the bottom of the via hole and deposited on lower portions of the sidewalls of the via hole. A fourth electrically conductive layer is formed within the via hole to form the electrically conductive via.

REFERENCES:
patent: 2004/0241940 (2004-12-01), Lee et al.
patent: 2005/0048767 (2005-03-01), Matsumoto
patent: 2005/0074968 (2005-04-01), Chen et al.

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