Barrier against metal diffusion

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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Details

257635, 257751, 257752, H01L 2348, H01L 2352, H01L 2940

Patent

active

056799829

ABSTRACT:
A method of forming a barrier layer for preventing the diffusion of a metal interconnect through an interlayer dielectric of an integrated circuit and to act as an etch stop. A thin metal layer is formed on the interlayer dielectric and then oxidized to form a metal-oxide barrier layer.

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