Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-08-13
1997-10-21
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257635, 257751, 257752, H01L 2348, H01L 2352, H01L 2940
Patent
active
056799829
ABSTRACT:
A method of forming a barrier layer for preventing the diffusion of a metal interconnect through an interlayer dielectric of an integrated circuit and to act as an etch stop. A thin metal layer is formed on the interlayer dielectric and then oxidized to form a metal-oxide barrier layer.
REFERENCES:
patent: 3106489 (1963-10-01), Lepselter
patent: 3386894 (1968-06-01), Steppat
patent: 3507756 (1970-04-01), Wenger
patent: 3609471 (1971-09-01), Scace et al.
patent: 3848260 (1974-11-01), Tsunemitsu et al.
patent: 4146440 (1979-03-01), Thompson
patent: 4166193 (1979-08-01), Schmidt et al.
patent: 4206472 (1980-06-01), Chu et al.
patent: 4561009 (1985-12-01), Yonezawa et al.
patent: 4769345 (1988-09-01), Butt et al.
patent: 4816895 (1989-03-01), Kikkawa
patent: 4884120 (1989-11-01), Mochizuki et al.
patent: 4896204 (1990-01-01), Hirata et al.
patent: 4926237 (1990-05-01), Sun et al.
patent: 5015604 (1991-05-01), Lim et al.
patent: 5021869 (1991-06-01), Kaw
patent: 5060050 (1991-10-01), Tsuneoka et al.
patent: 5126163 (1992-06-01), Chan
patent: 5210054 (1993-05-01), Ikeda et al.
patent: 5369303 (1994-11-01), Wei
patent: 5372974 (1994-12-01), Doan et al.
patent: 5401680 (1995-03-01), Abt et al.
patent: 5465004 (1995-11-01), Lim et al.
patent: 5580825 (1996-12-01), Labunov et al.
IBM TDB vol. 20, No. 7, Dec. 1977 Self-Aligned Fine Line Process for Making Capacitor Memories Geipel, et al. pp. 2588-2589.
Arroyo T. M.
Intel Corporation
Saadat Mahshid D.
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