BARC etch comprising a selective etch chemistry and a high...

Details BARC etch comprising a selective etch chemistry and a high... BARC etch comprising a selective etch chemistry and a high...

2005-05-31

2005-05-31

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C438S735000

Reexamination Certificate

active

06900123

ABSTRACT:
A BARC etch comprises a selective etch chemistry in combination with a high-polymerizing gas for CD control. The BARC etch may be used in a via-first dual damascene method. After via (116) pattern and etch, a thick BARC layer (120) is deposited to fill the via (116) and coat the IMD (110). A trench resist pattern (125) is formed over the BARC layer (120). Then, the exposed portion of BARC (120) over the IMD (110) is etched using a high-polymerizing gas added to a selective etch chemistry. The more polymerizing gas passivates the trench resist (125) sidewall to preserve or improve the trench CD. During the main trench etch, portions of BARC (120) remain in the via to protect the etch-stop (104) at the bottom of the via (116).

REFERENCES:
patent: 6455411 (2002-09-01), Jiang et al.
patent: 6569599 (2003-05-01), Lee et al.
patent: 6589707 (2003-07-01), Lee et al.

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