Bar-type field effect transistor and method for the...

Details Bar-type field effect transistor and method for the... Bar-type field effect transistor and method for the...

2005-12-20

2005-12-20

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257S350000, C257S347000, C257S348000, C257S349000

Reexamination Certificate

active

06977413

ABSTRACT:
The bar-type field effect transistor consists of a substrate, a bar placed above a substrate and a gate and spacer placed above part of the bar.

REFERENCES:
patent: 4996574 (1991-02-01), Shirasaki
patent: 5115289 (1992-05-01), Hisamoto et al.
patent: 5512517 (1996-04-01), Bryant
patent: 5637884 (1997-06-01), Yang
patent: 5801397 (1998-09-01), Cunningham
patent: 6432829 (2002-08-01), Muller et al.
patent: 6448615 (2002-09-01), Forbes et al.
patent: 2001/0002054 (2001-05-01), Sunami et al.
patent: 2002/0102813 (2002-08-01), Wu et al.
patent: 199 24 571 (2000-11-01), None
patent: 0623 963 (1994-11-01), None
patent: 2263473 (1990-10-01), None
D. Hisamoto et al. A Fully Depleted Lean Channel Transistor (DELTA)—A novel vertical ultrathin SOI MOSFET, in IEEE Electron Device Letters, vol. 11, No. 1 pp. 36-38, 1990.

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