Bar field effect transistor

Details Bar field effect transistor Bar field effect transistor

1996-12-13

1999-08-03

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257331, 257334, H01L 2976, H01L 2994, H01L 31062

Patent

active

059329114

ABSTRACT:
A field effect transistor is formed across one or more trenches (26) or bars (120), thereby increasing the effective width of the channel region and the current-carrying capacity of the device.

REFERENCES:
patent: 4835584 (1989-05-01), Lancaster
patent: 5134448 (1992-07-01), Johnson et al.
patent: 5177572 (1993-01-01), Murakami
patent: 5689128 (1997-11-01), Hshieh et al.
patent: 5721443 (1998-02-01), Wu

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