Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2006-08-08
2006-08-08
Tran, Andrew Q. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S230030, C365S195000, C365S063000, C365S230080
Reexamination Certificate
active
07088635
ABSTRACT:
A partial array self refresh (PASR) control apparatus for use in a semiconductor memory device having a plurality of banks includes: a bank deselection unit having a plurality of bank deselection signal output units for receiving a plurality of PASR code signals, wherein input terminal lines of each bank deselection signal output unit and signal lines of the plurality of PASR code signals are crossed each other and are selectively coupled each other.
REFERENCES:
patent: 6590822 (2003-07-01), Hwang et al.
patent: 6650587 (2003-11-01), Derner et al.
patent: 6738861 (2004-05-01), Lawrence
patent: 6760806 (2004-07-01), Jeon
patent: 6819617 (2004-11-01), Hwang et al.
patent: 6834022 (2004-12-01), Derner et al.
patent: 2005/0041506 (2005-02-01), Hwang et al.
patent: 2002-334576 (2002-11-01), None
patent: 1020020068749 (2002-08-01), None
patent: 1020040040579 (2004-05-01), None
Hur Hwang
Kim Tae-Yun
Hynix / Semiconductor Inc.
Tran Andrew Q.
LandOfFree
Bank based self refresh control apparatus in semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bank based self refresh control apparatus in semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bank based self refresh control apparatus in semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3664255