Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2007-11-27
2007-11-27
Potter, Roy Karl (Department: 2822)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C438S312000
Reexamination Certificate
active
11266797
ABSTRACT:
A method for fabricating a heterojunction bipolar transistor (HBT) is provided. The method includes providing a substrate including a collector region; forming a compound base region over the collector region; forming a cap layer overlying the compound base region including doping the cap layer with a pre-determined percentage of at least one element associated with the compound base region; and forming an emitter region over the cap layer.
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Carver Damian
Enicks Darwin Gene
Atmel Corporation
Potter Roy Karl
Sawyer Law Group LLP
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