Banded indirection for nonvolatile memory devices

Details Banded indirection for nonvolatile memory devices Banded indirection for nonvolatile memory devices

2008-06-30

2011-11-29

Thai, Tuan (Department: 2185)

Electrical computers and digital processing systems: memory

Storage accessing and control

Specific memory composition

C711S004000, C711S005000, C711S100000, C711S102000

Reexamination Certificate

active

08069299

ABSTRACT:
Methods, apparatuses, and computer program products that enable banded indirection for nonvolatile memory devices, such as flash memory devices, are disclosed. One or more embodiments comprise a method for performing banded indirection when accessing data of a nonvolatile device. The methods comprise tracking fragmentation of a band of physical addresses of the nonvolatile memory device, storing a physical address of the band, and accessing data of a logical address of the band via the stored physical address based on the fragmentation of the band. Some embodiments comprise apparatuses for accessing data of nonvolatile devices using banded indirection. The embodiments comprise a nonvolatile memory element to store data, wherein the nonvolatile memory element has bands of physical addresses, a fragmentation detector to detect fragmentation of a band of the nonvolatile memory, and a data access module to access data of the band via a physical address based on the fragmentation.

REFERENCES:
patent: 7877524 (2011-01-01), Annem et al.
patent: 2007/0073996 (2007-03-01), Kruger et al.
patent: 2007/0143378 (2007-06-01), Gorobets
patent: 2008/0077762 (2008-03-01), Scott et al.

Affiliated with

Also associated with

Rating

Banded indirection for nonvolatile memory devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Banded indirection for nonvolatile memory devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Banded indirection for nonvolatile memory devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4297553