Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-06-10
2008-06-10
Dickey, Thomas (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257S368000, C257SE29322, C257SE29339, C977S749000, C977S755000
Reexamination Certificate
active
07385262
ABSTRACT:
A method to electronically modulate the energy gap and band-structure of semiconducting carbon nanotubes is proposed. Results show that the energy gap of a semiconducting nanotube can be narrowed when the nanotube is placed in an electric field perpendicular to the tube axis. Such effect in turn causes changes in electrical conductivity and radiation absorption characteristics that can be used in applications such as switches, transistors, photodetectors and polaron generation. By applying electric fields across the nanotube at a number of locations, a corresponding number of quantum wells are formed adjacent to one another. Such configuration is useful for Bragg reflectors, lasers and quantum computing.
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Cho Kyeongjae
O'Keeffe James
Davis , Wright, Tremaine, LLP
Dickey Thomas
Erdem Fazli
The Board of Trustees of the Leland Stanford Junior University
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