Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-30
2011-08-30
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000, C257S187000, C257SE27133, C257SE21051, C257SE21126, C438S700000, C438S199000
Reexamination Certificate
active
08008696
ABSTRACT:
A complementary metal-oxide-semiconductor (CMOS) optical sensor structure comprises a pixel containing a charge collection well of a same semiconductor material as a semiconductor layer in a semiconductor substrate and at least another pixel containing another charge collection well of a different semiconductor material than the material of the semiconductor layer. The charge collections wells have different band gaps, and consequently, generate charge carriers in response to light having different wavelengths. The CMOS sensor structure thus includes at least two pixels responding to light of different wavelengths, enabling wavelength-sensitive, or color-sensitive, capture of an optical data. Further, a design structure for the inventive complementary metal-oxide-semiconductor (CMOS) image sensor is also provided.
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Cheng Kangguo
Furukawa Toshiharu
Robison Robert
Tonti William R.
Canale Anthony J.
Diallo Mamadou
International Business Machines - Corporation
Richards N Drew
Scully , Scott, Murphy & Presser, P.C.
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